BSS209PW L6327 Tech Spezifikatioune
Infineon Technologies - BSS209PW L6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSS209PW L6327
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1.2V @ 3.5µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-SOT323 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 580mA, 4.5V | |
Power Dissipation (Max) | 300mW (Ta) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 89.9 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.38 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 580mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSS209PW L6327.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSS209PW L6327 | BSS209PW | BSS205NH6327XTSA1 | BSS214NH6327XTSA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Supplier Device Package | PG-SOT323 | PG-SOT323 | PG-SOT23 | PG-SOT23 |
Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 580mA (Ta) | 580mA (Ta) | 2.5A (Ta) | 1.5A (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 1.38 nC @ 4.5 V | 1.38 nC @ 4.5 V | 3.2 nC @ 4.5 V | 0.8 nC @ 5 V |
Vgs (Max) | ±12V | ±12V | ±12V | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 89.9 pF @ 15 V | 89.9 pF @ 15 V | 419 pF @ 10 V | 143 pF @ 10 V |
FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1.2V @ 3.5µA | 1.2V @ 3.5µA | 1.2V @ 11µA | 1.2V @ 3.7µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 300mW (Ta) | 520mW (Ta) | 500mW (Ta) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 550mOhm @ 580mA, 4.5V | 550mOhm @ 580mA, 4.5V | 50mOhm @ 2.5A, 4.5V | 140mOhm @ 1.5A, 4.5V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden BSS209PW L6327 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSS209PW L6327 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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